InGaAs APD Modules

Chitsanzo: GD6510Y/ GD6511Y/ GD6512Y

Kufotokozera Kwachidule:

Ndi indium gallium arsenide avalanche photodiode module yokhala ndi pre-amplification circuit yomwe imathandizira kuti siginecha yofooka yapano ikwezedwe ndikusintha kukhala siginecha yamagetsi kuti ikwaniritse kutembenuka kwa photon-photoelectric-signal amplification.

pezani mtengo Tsitsani

Technical Parameter

Zolemba Zamalonda

Mawonekedwe

Mbali yakutsogolo yowunikira chip
Kuyankha mwachangu
Kuzindikira kwakukulu kwa chowunikira

Mapulogalamu

Kusintha kwa laser
Laser kulankhulana
Chenjezo la laser

Photoelectric parameter(@Ta=22±3℃）

Chinthu #	Gulu la phukusi	Diameter of photosensitive surface(mm)	Mayankho osiyanasiyana (nm)	Mphamvu yamagetsi (V)	Kuyankha M=10 λ = 1550nm (kV/W)	Nthawi yokwera (ns)	Bandwidth (MHz)	Kutentha kwa Coefficient T_a=-40℃～85℃ (V/℃)	Mphamvu yofanana ndi phokoso (pW/√Hz)	Concentricity (μm)	M'malo mtundu m'mayiko ena
GD6510Y	KUTI-8	0.2	1000 ~ 1700	30-70	340	5	70	0.12	0.15	≤50	C3059-1550-R2A
GD6511Y		0.5				10	35		0.21		−
GD6512Y		0.08				2.3	150		0.11		C3059-1550-R08B