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InGaAs APD Modules

InGaAs APD Modules

Chitsanzo: GD6510Y/ GD6511Y/ GD6512Y

Kufotokozera Kwachidule:

Ndi indium gallium arsenide avalanche photodiode module yokhala ndi pre-amplification circuit yomwe imathandizira kuti siginecha yofooka yapano ikwezedwe ndikusintha kukhala siginecha yamagetsi kuti ikwaniritse kutembenuka kwa photon-photoelectric-signal amplification.


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Technical Parameter

Zolemba Zamalonda

Mawonekedwe

  • Mbali yakutsogolo yowunikira chip
  • Kuyankha mwachangu
  • Kuzindikira kwakukulu kwa chowunikira

Mapulogalamu

  • Kusintha kwa laser
  • Laser kulankhulana
  • Chenjezo la laser

Photoelectric parameter(@Ta=22±3℃

Chinthu #

 

 

Gulu la phukusi

 

 

Diameter of photosensitive surface(mm)

 

 

Mayankho osiyanasiyana

(nm)

 

 

Mphamvu yamagetsi

(V)

Kuyankha

M=10

λ = 1550nm

(kV/W)

 

 

 

 

Nthawi yokwera

(ns)

Bandwidth

(MHz)

Kutentha kwa Coefficient

Ta=-40℃~85℃

(V/℃)

 

Mphamvu yofanana ndi phokoso (pW/√Hz)

 

Concentricity (μm)

M'malo mtundu m'mayiko ena

GD6510Y

 

 

KUTI-8

 

0.2

 

 

1000 ~ 1700

30-70

340

5

70

0.12

0.15

≤50

C3059-1550-R2A

GD6511Y

0.5

10

35

0.21

GD6512Y

0.08

2.3

150

0.11

C3059-1550-R08B


  • Zam'mbuyo:
  • Ena: